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Accueil du site > FRANCAIS > Communication > Séminaires > Année 2008 > Low Energy Electron Depth Profile and Backscattering from C, Al, Cu Thin


Low Energy Electron Depth Profile and Backscattering from C, Al, Cu Thin

Yek Wah Lam, Dept. of Physics, Faculty of Science, University of Malaya, Kuala Lumpur
Vendredi 3 Octobre 2008 à 10h30 - Salle des Séminaires

The low energy electron (and positron) ionization is well described in GEANT4, but the elastic scattering may not be the case. The total elastic and transport cross sections for electrons (and positrons) have been embedded for the current Monte Carlo simulation. The atomic potentials of atomic number lower than 19 are described by Hartree-Fock model, whereas Dirac-Hartree-Fock-Slater model is used for the atomic otentials of atomic numbers higher than 18. Furness and McCarthy expression has been used for the exchange effects. The few hundred eV and keV electron depth distribution has been studied for the case of carbon film deposited on aluminium substrate.